Samsung and IBM announced a breakthrough 200GHz cutoff frequency of graphene FET
Graphene FET's
Graphene FET's
In the "IEDM 2010 seminar on the opening day, South Korea's Samsung Advanced Institute of Technology (SAIT) and IBM have released a Electronic Components Distributors U.S. breakthrough 200GHz cutoff frequency of graphene FET. Two companies plan to apply high-frequency RF components.
SAIT President Kinam Kim delivered a morning keynote speech, presented the Institute's latest developments in graphene FET. Kim said that the Institute with a diameter of 150mm silicon substrate produced a gate length of 180nm graphene FET, and proven to work with the cutoff frequency of 202GHz. Graphene film using semiconductor manufacturing technology, and high-affinity low-temperature plasma enhanced CVD method approach, film-forming temperature of 650 ?. Kim said, this method has been established that even single-layer graphene film technology. Carrier mobility rate of 10,000 3000cm2/Vs.
On graphene FET, Kim said in his speech, "as the high-speed high-frequency IC Distributors signal processing components, with a high potential, but also integration with Si-CMOS circuit. In the future may also be estimated with the same silicon substrate with component integration graphene FET and spin electronics components, etc. In addition, SAIT's IEDM will be posted on the results of Kim introduced the details.
IBM and the Massachusetts Institute of Technology released (MIT), joint research results. Both co-developed form. in the SiC substrate gate length of 240nm graphene FET, and verify its cut-off frequency of 230GHz. Graphene substrate and SiC film by heat treatment. The team also produced a gate length of 100nm below the graphene FET, gate length of 90nm components cut-off frequency of 170GHz. According to IBM, cut-off frequency components than the gate length of 240nm low is because the size is still unable to establish a shorter gate electrode formation process of self-adjustment, and can not use the gate electrode controls the electric field channel accounted for half the gate length. If BUY Electronic Components you can overcome these problems, the components 90nm gate length "cut-off frequency can be increased to 300G ~ 400GHz (IBM's publisher YQWu).
來自 “ ITPUB部落格 ” ,連結:http://blog.itpub.net/25466378/viewspace-717973/,如需轉載,請註明出處,否則將追究法律責任。
相關文章
- unity shader 溶解,上下左右,cutoffUnity
- linux - word frequencyLinux
- Individual Project - Word_frequencyProject
- Individual Project - Word frequency programProject
- Record for Individual Project ( Word frequency program )Project
- DMT 模式下Oracle Extent空間管理 -- uet$ & fet$模式Oracle
- DMT 模式下Oracle Extent空間管理 -- uet$ & fet$模式Oracle
- [LeetCode] 451. Sort Characters By FrequencyLeetCode
- DMT(資料字典管理)表空間下的uet$, fet$
- Oracle 12c新特性 - Top frequency histogram 3OracleHistogram
- Oracle 12c新特性 - Top frequency histogram 2OracleHistogram
- Oracle 12c新特性 - Top frequency histogram 1OracleHistogram
- [LeetCode] 2080. Range Frequency QueriesLeetCode
- Lc 895. Maximum Frequency Stack 最大頻率棧 JSJS
- [20170604]12c Top Frequency histogram 2Histogram
- Apple Pay和Samsung Pay看著相似 差別太大了APP
- Samsung宣傳片嘲盡Apple iPhone 十年弱點APPiPhone
- 三星Gear S2智慧手錶用上了Samsung Pay
- [20170603]12c Top Frequency histogram.txtHistogram
- Galaxy S6或搭載Samsung Pay對抗蘋果Apple Pay蘋果APP
- ibmIBM
- Feminist Frequency:今年釋出了的遊戲中有18%以女性角色為主遊戲
- 現貨供應IBM 24P8062 /IBM 7889/IBM 5237/IBM 8646IBM
- 基於Samsung平臺CM11.0編譯ROM及刷機全過程編譯
- 三星釋出Galaxy S6及移動支付服務Samsung Pay
- /ibm/fanIBM
- IBM HeapAnalyzerIBM
- ibm tsmIBM
- ibm gpfsIBM
- IBM硬碟IBM硬碟
- IBM RedBooksIBM
- IBM developerWorksIBMDeveloper
- ibm 摩根IBM
- IBM EnglishIBM
- 【leetcode】高頻題目整理_樹結構篇( High Frequency Problems, Tree )LeetCode
- Kantar Worldpanel ComTech: Samsung以36.0%的份額成為英國銷量最高智慧手機品牌
- IBM vs 浪潮IBM
- 調侃IBMIBM